e-ISSN 2231-8542
ISSN 1511-3701

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A Study of Negative Bias Temperature Instability (NBTI) in p-MOSFET Devices

H. Hussin and M. F. Zainudin

Pertanika Journal of Tropical Agricultural Science, Volume 25, Issue S, January 2017

Keywords: NBTI, temperature, voltage stress gate, frequency, threshold voltage (Vth), AC, DC, recovery

Published on: 09 May 2017

Negative bias temperature instability (NBTI) is a common phenomenon in a p-channel MOSFET device under a negative gate-to-source voltage at a high stress temperature. This paper presents the NBTI characterisation based on different analysis methods and stress conditions on p-MOSFET devices. The atomic hydrogen concentration is probed at interface, Poly-Si and channel of p-MOSFET under study using SILVACO TCAD tool. In addition, the behaviour of the permanent and recoverable component was investigated based on AC stress at different stress conditions using Modelling Interface Generation (MIG) tool. The results show that increases in temperature, negative voltage stress gate and decreases in frequency increase the threshold voltage shift, thus enhancing NBTI degradation.

ISSN 1511-3701

e-ISSN 2231-8542

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