In this paper, an explicit analytical model for a Graded Channel Gate All Around Schottky Barrier MOSFET is presented. The problem of carrier mobility degradation in a uniformly highly-doped Schottky Barrier MOSFET is assessed by graded channel architecture in which high doping is considered in the source and low doping in the drain. The Evencent Mode Analysis is carried out using the superposition technique to obtain the surface potential in the channel. The one-dimensional Poisson's and two-dimensional Laplace equations are solved to calculate the surface potential. The subthreshold current is obtained using the surface potential analysis. A TCAD simulator (ATLAS-3D device simulator) is used for numerical simulation purposes. The developed model results are in good agreement with the TCAD simulations.