PERTANIKA JOURNAL OF TROPICAL AGRICULTURAL SCIENCE

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• Jiang, Z., Hua, M., Huang, X., Li, L., Wang, C., Chen, J., & Chen, K. J. (2022). Negative gate bias induced dynamic on-resistance degradation in schottky-type p -gan gate HEMTs. IEEE Transactions on Power Electronics, 37(5), 6018–6025. https://doi.org/10.1109/TPEL.2021.3130767

• Jones, E. A., Wang, F. F., & Costinett, D. (2016). Review of commercial GaN power devices and GaN-based converter design challenges. IEEE Journal of Emerging and Selected Topics in Power Electronics, 4(3), 707–719. https://doi.org/10.1109/JESTPE.2016.2582685

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• Lidow, A., Rooij, M., Strydom, J., Reusch, D., & Glaser, J. (2019). GaN Transistors for Efficient Power Conversion. Wiley. https://doi.org/10.1002/9781119594406

• Liu, Z., Huang, X., Lee, F. C., & Li, Q. (2014). Package parasitic inductance extraction and simulation model development for the high-voltage cascode GaN HEMT. IEEE Transactions on Power Electronics, 29(4), 1977–1985. https://doi.org/10.1109/TPEL.2013.2264941

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• Nakajima, A., Sumida, Y., Dhyani, M. H., Kawai, H., & Narayanan, E. M. S. (2010). High density two-dimensional hole gas induced by negative polarization at GaN/AlGaN heterointerface. Applied Physics Express, 3(12), Article 121004. https://doi.org/10.1143/APEX.3.121004

• Niu, Y. C., Huang, Y. T., Chen, C. L., & Chen, Y. M. (2018, October 30-November 2). Design considerations of the gate drive circuit for GaN HEMT Devices. [Paper presentation]. Asian Conference on Energy, Power and Transportation Electrification (ACEPT), Singapore. https://doi.org/10.1109/ACEPT.2018.8610849

• Reusch, D., Strydom, J., & Lidow, A. (2015, March 15-19). A new family of GaN transistors for highly efficient high frequency DC-DC converters. [Paper presentation]. IEEE Applied Power Electronics Conference and Exposition (APEC), Charlotte, USA. https://doi.org/10.1109/APEC.2015.7104619

• Roccaforte, F., Fiorenza, P., Greco, G., Lo Nigro, R., Giannazzo, F., Iucolano, F., & Saggio, M. (2018). Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices. Microelectronic Engineering, 187–188, 66–77. https://doi.org/10.1016/j.mee.2017.11.021

• Wang, F., Chen, W., Li, X., Sun, R., Xu, X., Xin, Y., Wang, Z., Shi, Y., Xia, Y., Liu, C., Zhou, J., Zhou, Q., & Zhang, B. (2020). Charge storage impact on input capacitance in p-GaN gate AlGaN/GaN power high-electron-mobility transistors. Journal of Physics D: Applied Physics, 53(30), Article 305106. https://doi.org/10.1088/1361-6463/ab86e7

• Wang, W., Liang, Y., Zhang, M., Lin, F., Wen, F., & Wang, H. (2021). Mechanism analysis of dynamic on-state resistance degradation for a commercial GaN HEMT using double pulse test. Electronics, 10(10), Article 1202. https://doi.org/10.3390/electronics10101202

• Wonglakhon, T., & Zahn, D. (2020). Interaction potentials for modelling GaN precipitation and solid state polymorphism. Journal of Physics: Condensed Matter, 32(20), Article 205401. https://doi.org/10.1088/1361-648X/ab6cbe

• Zhang, Y., Sun, M., Perozek, J., Liu, Z., Zubair, A., Piedra, D., Chowdhury, N., Gao, X., Shepard, K., & Palacios, T. (2018). Large area 1.2 kV GaN vertical power FinFETs with a record switching figure-of-merit. IEEE Electron Device Letters, 40(1), 75-78. https://doi.org/10.1109/LED.2018.2880306